[14p-P5-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[14p-P5-12] Formation of Bi doped layer on vicinal Si(211) surface 2

〇Kazushi Miki^1,2, Koichi Murata^1,2, Takashi Kanazawa^1,2, Hiroya Tanaka³, Koh'ichi Nittoh^1,2, Shinya Ohno³, Masatoshi Tanaka³ (1.NIMS, 2.Univ. of Tsukuba, 3.YNU)

Keywords:silicon, doping, bismuth

We report the Bi delta doping process onto the Si vicinal surface (211) with using surface reconstructed Bi surface. Si(211) surface consists of both (733) and (111) facets. After the epitaxial growth of Si on Bi/Si(211), we can get Bi doping peak density of 10¹⁸–10²⁰ cm^-3, depeding on growth temperature, evaluated by SIMS. In the case of 400 degree C of growth temerature, we can get carrier density of 4.0 × 10¹⁹ cm^-3 by electronic properties characterization.