[14p-P5-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[14p-P5-9] Aluminium-assisted chemical vapor etching of silicon dioxide, and its characterization

〇Reo Kometani¹, Takahiro Murakami¹, Etsuo Maeda¹ (1.The Univ. of Tokyo)

Keywords:Metal-assisted chemical vapor etching, Aluminium, Silicon dioxide

In this study, the etching characteristics and chemical-bonding state were evaluated in order to clarify the etching mechanism of a metal-assisted chemical etching of SiO₂ using Al. As a result, the etching speed with Al was 14 times faster than it without Al, and we confirmed that the Al enhanced the VHF chemical etching. In addition to this, we found that the enhancement of the etching speed on Al-assisted VHF chemical etching was induced by the local density increasing of HF on neighborhood of Al.