[14p-P5-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[14p-P5-8] Nano-Gap Electrode Array Prepared by Photolithography and UV Curing Processing

Mako Kumeuchi¹, Shinya Kumagai¹, Hyungjun Cho², Hiroki Kondo², Kenji Ishikawa², Masaru Hori², 〇Minoru Sasaki¹ (1.Toyota Tech. Inst., 2.Nagoya Univ.)

Keywords:Nano-gap electrode, UV curing, Photolithography

UV curing has been found to be useful for designing the new process. The standard g/i-line photoresist changes its property to be inert against the thinner and the developer. The material used is clean and well-established in the lithography. In this study, the sub-µm width pattern is realized using the shadow area adjacent to the UV cured photoresist against the exposure UV light. The process condition and the design are described. The obtained nano-gap is observed with the optical microscope and its performance is described.