[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-12] In situ XRR and HAXPES study on thermal oxidation of 4H-SiC

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹, Kousuke Muraoka², Shin-Ichiro Kuroki² (1.JASRI, 2.Hiroshima Univ. Nanodevice)

Keywords:SiC, in situ XRR, HAXPES

In this study, we carried out detailed in situ X-ray reflectivity (XRR) and hard X-ray photoelectron spectroscopy (HAXPES) measurements to evaluate thermal oxide process for SiC substrate such as the growth behavior of oxide layer during the thermal treatment and the chemical states at the SiO₂/SiC interface. In situ XRR results indicated that the oxide layer sharply grew around 800 degrees. In addition, HAXPES measurement revealed that there exist sub-oxide components on the SiC substrate before and after thermal treatment.