[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-5] Mapping of interfacial reaction of Ni/n-SiC Schottky contacts using scanning internal photoemission microscopy

〇Takanori Hashidume¹, Yusuke Hata¹, Masasi Kato², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Nagoya Inst. of Tech)

Keywords:scanning internal photoemission microscopy, SiC Schottky contacts, thermal degradation

We have developed scanning internal photoemission microscopy to verify the electrical inhomogeneity of metel semiconductor interfaces. In this study, we demonstrated to characterize interfacial reaction of Ni/n-SiC contacts. After annealing at 600℃, metal luster was lost around electrode and photocurrent increased there. After annealing at 800℃, the metal luster was lost in the entire electrode and the photocurret increased as shown in the 600℃ annealed sample. Scanning internal photoemission microscopy is suitable for characterize of macro interfacial reaction over the electrode.