[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-6] Ohmic contact formation for n⁺ 4H-SiC substrate by selective heating method using hydrogen radical irradiation

Tetsuji Arai¹, Kazuki Kamikura¹, Chiaya Yamamoto¹, Mai Shirakura¹, Keisuke Arimoto¹, Junji Yamanaka¹, 〇Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Masaaki Ogino³, Masaaki Tachioka³, Haruo Nakazawa³ (1.Univ. Yamanashi, 2.SST Inc., 3.Fuji Electric Co., Ltd.)

Keywords:SiC, ohmic contact