[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-7] Low resistance Ni/Ti multilayer ohmic contact formation by Laser annealing on 4H-SiC C face

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

Keywords:SiC, Ohmic, Laser annealing