[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-9] Origin of photo luminescence of SiC particles fabricated by laser ablation in ethanol

〇Takumu Yamada¹ (1.Tokyo univ of sci.)

Keywords:SiC, laser ablation

We performed optical measurements for silicon carbide (SiC) particles fabricated by laser ablation method using 4H-SiC crystal in ethanol. The blueshift of the absorption band edge from the target material was observed, which indicates the quantum size effect of SiC nanoparticles. In addition, the PL spectra of SiC particles were quite different from the target materials. We have tried to reveal the origin of the PL bands of the SiC particles by examining the heat treatment of the sample.