The 77th JSAP Autumn Meeting, 2016

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-A22-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 15, 2016 9:00 AM - 12:00 PM A22 (Main Hall B)

Tomoki Abe(Tottori Univ.)

10:00 AM - 10:15 AM

[15a-A22-5] Influence of grain boundary on carrier transport in polycrystalline transparent conducting Al-doped ZnO thin films (Ⅳ)

〇ryousuke uozaki1, Toshihiro Miyata1, Tadatsugu Minami1 (1.OEDS R&D Center, K I T)

Keywords:ZnO