[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-5] CZ Si Crystals Contacted with Melt during Pull-Stop (III)
- Synchrotron Radiation X-ray Topography of Dislocation Crowd -

〇Junji Matsui¹, Yoshiyuki Tsusaka², Tetsuya Tsurumaru², Takao Abe³ (1.SR Nano-Tech.Center, Univ. Hyogo, 2.Grad. School mat. Sci., Univ. Hyogo, 3.ShinEtsu Handotai)

Keywords:silicon, dislocation, X-ray topography

Dislocation crowd in a Si ingot was observed by high-resolution synchrotron radiation X-ray topography under multiple-diffraction and simultaneous diffraction conditions. Almost all dislocations were found to be perfect dislocations having Burgers vector of b = a/2<110> type, 45 degree inclined from a pulling axis of the Si ingot.