11:15 AM - 11:30 AM
[15a-A23-9] Precipitation behavior of oxygen in nitrogen doped Cz-silicon wafers by ultra-high temperature RTP
Keywords:RTP, Oxygen precipitation, Interstitial silicon
Presentation information
Oral presentation
15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects
[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects
Thu. Sep 15, 2016 9:00 AM - 11:45 AM A23 (201B)
Kentaro Kutsukake(Tohoku Univ.), Hiroki Kawai(Toshiba)