[15a-A26-1~11] 6.2 Carbon-based thin films

[15a-A26-4] Temperature dependence of the emission spectra of Laser irradiated a-CN_x thin films

〇Keisuke Nakamura¹, Kazutoshi Fukui¹, Kohji Yamamoto², Ken-ichi Takarabe³, Shigeyuki Nakamura⁴, Kunio Itoh⁵, Shin-ichi Yamamoto⁵, Junji Sawahata⁶, Masaki Satake⁷ (1.Fac.of Engi.,Univ.of Fukui, 2.FIR Center,Univ.of Fukui, 3.Fac.of Sci.,Okayama Univ.Sci., 4.Tsuyama Nat.Col.Tech., 5.Fac.of Engi.,Ryukoku Univ., 6.Ibaraki Nat.Col.Tech., 7.Akashi Nat.Col.Tech.)

Keywords:carbon nitride, amorphous

Amorphous carbon nitride (a-CN_x) is known to have an interesting mechanical, electrical and optical properties. Therefore, it has been actively carried out research on synthesis, structure and properties. The a-CN_x has also been expected as an inexpensive white light emitting diode material.Recently, it is found that laser irradiated a-CN_x thin films after depositing show much higher photoluminescence(PL) intensity than those of as-deposited a-CN_x thin films, and their PL spectra have better reproducibility. In this report, we show the temperature dependence of the emission spectra of laser irradiated a-CN_x thin films.