The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[15a-A26-1~11] 6.2 Carbon-based thin films

Thu. Sep 15, 2016 9:00 AM - 12:00 PM A26 (203-204)

Haruhiko Ito(Nagaoka Univ. of Tech.)

10:30 AM - 10:45 AM

[15a-A26-6] Characteristics of Carbon nitride film fabricated by reactive sputtering method

Shunpei Ota1, Kazushi Fuse1, Yusuke Miyaguchi1, Hyung-Woo Ahn1, Takehito Jimbo1 (1.ISET, ULVAC, Inc.)

Keywords:carbon nitride, reactive sputtering, semiconductor

In this presentation, for application to the semiconductor field, we will report the results of characteristics and In-plane distribution of carbon nitride film (; using reactive sputtering, 300mm Si Sub)