[15a-A31-1~13] 6.3 Oxide electronics

[15a-A31-8] Fabrication and Characterization of Cu₂O Thin Film Deposited by Facing
Target Sputtering

〇Hikaru Watanabe¹, Yutaro Takei², Yuki Takiguchi², Shinsuke Miyajima¹ (1.Dept. of Electrical and Electronic Eng., 2.Dept.of Phy. Elec., Tokyo Tech.)

Keywords:Copper(I) oxide, c-Si heterojunction solar cells

Cu₂O is a p-type semiconductor that is possible to be doped with N. It can be used as a hole selective layer and as a BSF layer in c-Si heterojunction solar cells. In this study, the properties of Cu₂O thin films deposited using the FTS (Facing Target Sputtering) were investigated. It has been verified that theO₂ partial flow has an influence on carrier density in the Cu₂O thin films. A very high carrier density of 1×10²⁰cm⁻³was obtained by increasing the N₂ partial flow.