[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

▲ [15a-B1-1] Investigation of Mg Ion Implantation for Current Blocking in Vertical Ga₂O₃ Transistors

〇ManHoi Wong¹, Kohei Sasaki^2,1, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Keywords:Ga2O3, Mg ion implantation, current blocking

Vertical n-channel Ga₂O₃ transistors require an electron current blocking layer (CBL) to prevent direct source-drain leakage. Mg-ion (Mg⁺⁺) implanted Ga₂O₃ was studied in this work as a CBL in light of semi-insulating Ga₂O₃ obtained by Mg compensation doping of n-type bulk crystals. Systematic thermal anneals and electrical measurements established the migration behavior of implanted Mg⁺⁺ in Ga₂O₃ and presented evidence of implant activation, based on which a pathway for forming Mg⁺⁺-implanted CBLs is proposed.