09:00 〜 09:15
▲ [15a-B1-1] Investigation of Mg Ion Implantation for Current Blocking in Vertical Ga2O3 Transistors
キーワード:Ga2O3, Mg ion implantation, current blocking
Vertical n-channel Ga2O3 transistors require an electron current blocking layer (CBL) to prevent direct source-drain leakage. Mg-ion (Mg++) implanted Ga2O3 was studied in this work as a CBL in light of semi-insulating Ga2O3 obtained by Mg compensation doping of n-type bulk crystals. Systematic thermal anneals and electrical measurements established the migration behavior of implanted Mg++ in Ga2O3 and presented evidence of implant activation, based on which a pathway for forming Mg++-implanted CBLs is proposed.