[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

[15a-B1-10] Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Takanori Hashizume¹, Fumimasa Horikiri², Takeshi Tanaka², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, wavy surface morphology

We focused on a wavy surface morphology on n-GaN, and characterized by SIPM and PL mapping. We found that the surface roughness was about 50 nm. The same pattern was observed in the SIPM and PL results. The regions with small photocurrent consisted with large YL regions. This would be responsible for C distribution to compensate.