[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [15a-B1-11] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate Ⅱ

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:gallium nitride, p-n junction diode, wavy surface morphology

We reported a model of current-crowding at anode-electrode edges of GaN p-n junction diodes derived from their I-V characteristic dependence on the electrode size at the previous JSAP meeting. The model has been confirmed by direct observation of EL-intensity distribution using ITO transparent electrode for the back side of the diodes.