[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

[15a-B1-3] Ga₂O₃ Field-Plated Schottky Barrier Diodes with a Breakdown Voltage of Over 1 kV

〇Keita Konishi¹, Ken Goto^2,3, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^3,4, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.TAT, 4.Linkoping Univ.)

Keywords:Gallium oxide, Schottky Barrier Diodes, Field Plate

Gallium oxide (Ga₂O₃) is an attractive oxide semiconductor for next-generation power devices due to its extremely large bandgap of over 4.5 eV. The success of halide vapor phase epitaxy (HVPE) for high-speed growth of high-quality Ga₂O₃ thin films has led to full-scale development of vertical Ga₂O₃ devices. In this work, we report the first demonstration of Ga₂O₃ field-plated Schottky barrier diodes (FP-SBDs) with a record breakdown voltage (Vbr) of over 1 kV.