The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 9:00 AM - 11:15 AM B3 (Exhibition Hall)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

9:30 AM - 9:45 AM

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P+ and Sb+ ions

〇(M1)Shunya Sakai1, Kazuya Yamamura1, Hiroshi Nishigaki1, Noriyuki Hasuike1, Hiroshi Harima1, Woo Sik Yoo2 (1.Kyoto Inst. of Tech, 2.WaferMasters Inc.)

Keywords:germanium, impurities, laser annealing