2016年 第77回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.2 探索的材料物性・基礎物性

[15a-B3-1~9] 13.2 探索的材料物性・基礎物性

2016年9月15日(木) 09:00 〜 11:15 B3 (展示控室3)

末益 崇(筑波大)、山口 憲司(量研機構)

10:15 〜 10:30

[15a-B3-6] Characterization of undoped-BaSi2 on textured Si (001) substrate grown by molecular beam epitaxy

Tianguo Deng1、Ryota Takabe1、Suguru Yachi1、Zhihao Xu1、Miftahullatif Emha Bayu1、Kaoru Toko1、Noritaka Usami2、Takashi Suemasu1 (1.Univ. Tsukuba、2.Nagoya Univ.)

キーワード:barium disilicide, textured substrate

Barium disilicide (BaSi2) has attractive features for solar cell application such as a suitable band, and a large minority-carrier lifetime (τ ~ 10 μs) and a large minority-carrier diffusion length (L ~ 10 μm). Power conversion efficiency (η) was expected to be larger than 25% only in a 2-μm-thick BaSi2 pn junction diode. To ensure both light-trapping and epitaxy of BaSi2 on Si(111) faces, textured Si(001) substrates with Si(111) faces were formed. In this study, we attempted to grow BaSi2 on such a textured Si(001) substrate, and compared with the results obtained for BaSi2 on Si(111).