[15a-B9-1~6] 13.3 Insulator technology

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO₂ Interface:
Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials

〇(M2)Ryota Kunugi¹, Nobuhiro Nakagawa¹, Takanobu Watanabe¹ (1.Waseda Univ.)

Keywords:High-k film, Dipole, Molecular dynamics