[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-10] Wafer quality evaluation of high-speed SiC laser slicing wafer

〇Yoko Nishino¹, Kazuya Hirata¹, Kunimitsu Takahashi¹ (1.DISCO corp.)

Keywords:SiC, power device, laser

Here, we report wafer processing results using a laser slicing technology .If a wire process is used, it takes 70 hrs. to process 4” ingot completely. When laser slicing process is used, however, it is possible to process in several min. per wafer. Even if other processes (grinding etc.) that is necessary for laser slicing process are taken into consideration, 1/7 of processing time can be achieved. Furthermore, the number of wafer which can be achieved from an ingot, increases by 1.5 times because of smaller material loss. In 4” wafer that was obtained by laser slicing process, TTV was 3.2 mm and Warpage was 3.8 mm. From these results, lapping process which is necessary in the conventional process, can be skipped. This means it is possible to reduce a lead time of wafer making process considerably.