[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-12] SiC wafer etching rate behavior using ClF₃ gas

Ken Nakagomi¹, 〇Keisuke Kurashima¹, Shogo Okuyama¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat Univ., 2.Kanto Denka Kogyo, 3.AIST)

Keywords:SiC dry etching, Chlorine trifluoride, Etcher design

In order to develop the high speed silicon carbide wafer etching technique, the etcher aaplicable to 50mm-diameter wafer was developed. The etching rate profile was adjusted choosing the pin-holes of gas distributor. Its detail is reported.