[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-8] Development of SiC Epitaxial Reactor Cleaning Process Using Chlorine Trifluoride Gas-Evaluation of Pyrolytic Carbon as Susceptor Coating Material-

〇kohei shioda¹, hitoshi habuka¹, hideki ito², shin-ichi mitani³, yoshinao yakahashi³ (1.Yokohama Nat.Univ, 2.NuFlare Technology, 3.Kanto Denka Kogyo)

Keywords:SiC epitaxial reactor, Cleaning, Chlorine trifluoride

In order to develop the SiC CVD reactor cleaning technique, the protection film of the susceptor surface from the corrosion by ClF₃ gas should be studied. In this study, the pyrolitic carbon film was found to be robust to the etching reaction at the temperatures up to 480 ^oC.