[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-7] Deposition Rate and Anti-Corrosion of Amorphous SiC Film Formed at Room Temperature under Soft Plasma

〇MINH HONG MAI¹, Maria Tanaka¹, Kohei Shioda¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Silicon carbide film, Soft plasma, Monomethylsilane

The silicon carbide film formation technique using soft plasma at room temperature was studied focusing on the relationship between the silicon carbide film thickness and various process parameters. Additionally, the etching rate of the obtained film by chlorine trifluoride gas was found to be small.