[15a-P11-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-P11-12] Effects of Annealing on Resistivity of Si-doping GaAsN Films Grown by Atomic Layer Epitaxy

〇yuki yokoyama¹, Masaru Horikiri¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki)

Keywords:GaAsN, Atomic layer epitaxy, annealing

Focusing on atomic layer epitaxy (ALE) that can control the growth surface with a single atomic layer. GaAsN thin film made of the automatic stop mechanism under conditions, trying to Si doping. Si atoms in the GaAsN film functions as a donor, reported that does not increase the crystal defects. However, the electrical characteristics of GaAsN film produced by the ALE method is still low, it is necessary to improve. In the present study, we report the results of annealing to the ALE growth Si-doped GaAsN film was evaluated from the change of the resistivity of the impact on the crystalline.