[15a-P11-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-P11-13] Sublattice Reversal in GaAs/Ge/GaAs (113)B Heterostructures Grown by MBE

〇Xiangmeng Lu¹, Hiroto Ota¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

Keywords:molecular beam epitaxy, Sublattice reversal, high-index GaAs

The χ⁽²⁾ (second-order nonlinear susceptibility) inversion technique is useful in the construction of THz emitters based on the difference frequency generation in a coupled multilayer cavity on a high-index (113)B GaAs substrate. Sublattice reversal epitaxy is a versatile growth technique to realize χ⁽²⁾ inversion. In this study, heterostructures GaAs/Ge/GaAs were grown on a high-index (113)B GaAs by molecular beam epitaxy (MBE). Sublattice reversal in GaAs/Ge/GaAs heterostructrues were confirmed by comparison the etching profile of epitaxial sample with that of reference (113)A and (113)B GaAs substrates.