9:30 AM - 11:30 AM
[15a-P11-2] Effect of nitrogen doping on electronic states of wurtzite GaAs
Keywords:wurtzite GaAs, band structure
We theoretically investigated effect of nitrogen doping on energy bands of wurtzite GaAs.The conduction band edge of the wurtzite GaAs consists of two bands close in energy; One of the bands is called “bright band” because it is optically active. The other is called “dark band.” Since they are transposed easily, it was pointed out that optical properties could be altered easily even with small deviations such as strain.
By using the first-principle method and empirical pseudopotential method, we calculated band structure the wurtzite GaAs containing 2% nitrogen. It was found that nitrogen doping brings about strong mixing between the bright and the dark bands. We also found that red shift of the bright band is larger than that of that of the dark band. Owing to these effects of nitrogen, the nitrogen-doped wurtzite GaAs shows stability in optical properties. We also found that that the band structure strongly depends on spatial arrangement of nitrogen since the wurtzite GaAs has strong anisotropy.
By using the first-principle method and empirical pseudopotential method, we calculated band structure the wurtzite GaAs containing 2% nitrogen. It was found that nitrogen doping brings about strong mixing between the bright and the dark bands. We also found that red shift of the bright band is larger than that of that of the dark band. Owing to these effects of nitrogen, the nitrogen-doped wurtzite GaAs shows stability in optical properties. We also found that that the band structure strongly depends on spatial arrangement of nitrogen since the wurtzite GaAs has strong anisotropy.