[15a-P8-1~12] 3.15 Silicon photonics

[15a-P8-1] Temperature dependence of enhanced biaxial tensile strain of Ge layer grown on SOI substrate by using residual strain and microstructures

〇Satomi Ishida¹, Satoshi Kako^1,2, Katsuya Oda³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, RCAST Tokyo Univ., 2.NanoQuine Tokyo Univ., 3.HITACHI R&D Group)

Keywords:germanium, strain, enhancement