[15a-P9-1~20] 9.2 Nanowires and Nanoparticles

[15a-P9-17] Three-Dimensional Analysis of Phosphorus-Doped Si Nanocrystals Embedded in SiO₂ Matrix by Atom Probe Tomography

〇Yasuo Shimizu¹, Bin Han¹, Gabriele Seguini², Elisa Arduca^2,3, Celia Castro⁴, Gerard Ben Assayag⁴, Koji Inoue¹, Yasuyoshi Nagai¹, Sylvie Schamm-Chardon⁴, Michele Perego² (1.IMR Tohoku Univ., 2.IMM-CNR, 3.Universita degli Studi di Milano, 4.CEMES-CNRS)

Keywords:atom probe tomography, silicon, phosphorus

Si nanocrystals (Si NCs) embedded in SiO₂ matrix have attracted much attention for application to optical and electronic devices. The properties of these devices are strongly dependent on Si NCs structural characteristics. In our previous report, the shape, size and areal density of Si NCs as a function of SiO thickness were investigated by atom probe tomography (APT) [B. Han et al., JSAP Spring Meeting, 12p-A20-9 (2015)]. As a further step, an establishment of efficient doping method into Si NCs is challenging issue, and extensively studied recently. In this work, we studied phosphorous (P) doping into Si NCs embedded in SiO₂ by using APT, and explored efficient incorporation into Si NCs.