The 77th JSAP Autumn Meeting, 2016

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 15, 2016 1:30 PM - 6:00 PM A22 (Main Hall B)

Yasuaki Ishikawa(NAIST), Mamoru Furuta(Kochi Univ. of Tech.)

5:15 PM - 5:30 PM

[15p-A22-15] Optical loss in the near-infrared spectral region of polycrystalline
Ga-doped ZnO films for use as plasmonic materials

〇Tetsuya Yamamoto1, Junichi Nomoto1, Hisao Makino1 (1.Kochi Univ. Tech.)

Keywords:ZnO-based transparent conductive films, plasmonics, optical loss

We demonstrate Ga-doped ZnO (GZO) polycrystalline films with a very low optical loss for use in plasmonic devices in telecommunication. By optimizing the O2 flow rate during film growth and the discharge current, we achieved GZO films exhibiting a very low imaginary part of the dielectric function of 0.434 at the telecommunication wavelength of 1.5 μm.