Characteristics for aqueous solution-processed oxide semiconductor TFT with hydrogen injection and oxidation process

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 15, 2016 1:30 PM - 6:00 PM A22 (Main Hall B)

Yasuaki Ishikawa(NAIST), Mamoru Furuta(Kochi Univ. of Tech.)

2:30 PM - 2:45 PM

〇Masashi Miyakawa¹, Mitsuru Nakata¹, Hiroshi Tsuji¹, Yoshihide Fujisaki¹, Toshihiro Yamamoto¹ (1.NHK)

Keywords:Oxide Semiconductor, TFT