[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [15p-A22-7] Effects of Ga Content and Sintering Temperature on Electrical Properties of Solution-processed IGZO Thin Films

〇(M1)Yusuke Ochiai¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

Keywords:IGZO, solution process, semiconductor

IGZO thin films with various Ga contents and temperatures were fabricated by solution process. On current of the films sintered at 300 °C decreases monotonously with increasing Ga content, while that of the films sintered at 800 °C becomes maximum when Ga content is 40 %. We found that on current becomes maximum with high band gap energy and low oxygen vacancy by comparing these results with XPS and optical absorption measurement.