Measurement of oxygen concentration in FZ silicon crystal

Naohisa Inoue; Masumi Obuchi; Hiroyuki Uno; Keiko Inoue; Kaori Watanabe; Yuichi Kawamura

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Sep 15, 2016 1:15 PM - 6:45 PM A23 (201B)

Takahiro Maeta(Global Wafers Japan), Takuto Kojima(Meiji Univ.), Yutaka Ohno(Tohoku Univ.)

3:45 PM - 4:00 PM

[15p-A23-10] Measurement of oxygen concentration in FZ silicon crystal

〇Naohisa Inoue^6,1, Masumi Obuchi², Hiroyuki Uno³, Keiko Inoue⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Nano Science Corp., 3.SHI Exam. & Insp., 4.Toray Research C. Inc., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

Keywords:FZ silicon crystal, oxygen concentration measurement, infrared absorption

Oxygen concentration in FZ silicon crystal is measured by infrared absorption, secondary ion mass spectrometry and charged particle activation analysis. Concentration down to 1E+15 cm-3 is successfully measured.