[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-4] Evaluation of depletion layer in power device (2) Comparison with numerical calculation

〇Hidekazu Yamamoto¹, Kyohei Komori¹, Akinori Oda¹, Takeshi Uruma¹, Nobuo Satoh¹ (1.Chiba Inst. of Tech.)

Keywords:power device, semiconductor, Simulation

Spatiotemporal variations of carrier density and potential in Silicon-Schottky barrier diode (Si-SBD) has been simulated using a self-consistent spatially two-dimensional fluid model, based on the continuity equation and Poisson equation. Simulated surface-potential mapping was qualitatively good agreement with experimental one. This result shows the validity of the fluid model, developed in this work. The negatively charged fixed-charge region may play an important role in determining the width of depletion-layer of Si-SBD.