[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-3] Evaluation of depletion layer in power device (1) Evaluation by multi scanning prove microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma¹, Nobuo Satoh¹, Kyohei Komori¹, Akinori Oda¹ (1.Chiba Inst. of Tech.)

Keywords:power device, semiconductor, evaluation

We have developed a scanning-probe microscope (SPM) that combines atomic-force microscopy (AFM) with both Kelvin-probe force microscopy (KFM -- to measure the surface potential). Surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse bias, were measured over the same area by the AFM/KFM system. We thus investigated that influence of applied bias voltage and carrier trapped in the surface and interface states.