[15p-A33-1~19] 17.2 Graphene

[15p-A33-5] Annealing Effects on Transport Properties of Trilayer Graphene Field-Effect Transistors

〇Takuya Iwasaki^1,2, Manohran Muruganathan¹, Marek Schmidt¹, Hiroshi Mizuta^1,2 (1.JAIST, 2.Univ. of Southampton)

Keywords:Graphene Field-Effect Transistor, Annealing process, Transport property

Annealing effects on transport properties of trilayer graphene-based field-effect transistors are reported. We propose the mechanism of doping effect induced into graphene during the annealing process. Annealing is performed in a vacuum or a hydrogen/argon forming gas. Both vacuum and hydrogen annealing affect graphene, including the region under metal contacts, which results in the asymmetric electron-hole transport.