The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 15, 2016 1:45 PM - 5:30 PM B2 (Exhibition Hall)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

4:45 PM - 5:00 PM

[15p-B2-12] Band to Band Tunneling Model Considering Non-Uniform Electric field for Simulation of Tunnel FET

〇Hidehiro Asai1, Kocihi Fukuda1, Junichi Hattori1, Nobuyuki Sano2 (1.AIST, 2.Tsukuba Univ.)

Keywords:Tunnnel FET, Band to Band Tunneling, Non-Uniform Electric field

In this study, we develop a new band to band tunneling model for simulations of Tunnel FETs. This new model is based on WKB approximation and take into accont the effect of non-uniformity of electric field along tunneling path. We compare the simulation results with those from previous model and discuss the effect of non-uniformity of the electric field on device properties of Tunnel FETs.