Oral presentation

[15a-B2-1~8] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 15, 2016 10:00 AM - 12:15 PM B2 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[15a-B2-1] Water Flow between Wafers in Batch-Type Silicon Wafer Wet Cleaner

〇kento miyazaki¹, shogo okuyama¹, hitoshi habuka¹, akihiro goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

10:15 AM - 10:30 AM

[15a-B2-2] Water Nozzle Design for Batch-type Silicon Wafer Wet Cleaning Bath

〇shogo okuyama¹, Kento Miyazaki¹, Nobutaka Ono¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

10:30 AM - 10:45 AM

[15a-B2-3] Comparison of vacuum drying and spin drying Lmprovement of pattern collapse

〇Yoshiharu Yamamoto¹ (1.Yamato Technos)

10:45 AM - 11:00 AM

[15a-B2-4] Behavior analysis of Si etching process with the HF/HNO3 mixture by single spin wafer processor

〇Takashi Oinoue¹, Suguru Saito², Atsushi Okuyama², Yoshiya Hagimoto², Hayato Iwamoto² (1.Sony Semiconductor Manufacturing, 2.Sony Semiconductor Solutions)

11:15 AM - 11:30 AM

△ [15a-B2-5] Formation of the sulfur-terminated Ge(111) surface using HF aq. solution with H₂SO₃

〇Yusuke Fujishima¹, Hitoshi Suzuki¹, Hiroyuki Sakaue¹ (1.Hiroshima Univ.)

11:30 AM - 11:45 AM

[15a-B2-6] Molecular Dynamics Analysis on the Behavior of Water Detached by IPA on SiO₂ Surface

〇Takuya Hayashi¹, Yasutaka Yamaguchi¹, Masayuki Kawakami², Daisaku Yano², Koji Yamanaka² (1.Osaka Univ., 2.Organo Corp.)

11:45 AM - 12:00 PM

△ [15a-B2-7] Formation of atomically flat Si(100) surface by Ar/H₂ annealing and its effect on MISFET characteristics

〇(D)Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

12:00 PM - 12:15 PM

[15a-B2-8] Occupation Area of Organic Molecules Adsorbed in Multi-Component System

〇Yifan Zhou¹, Hitosi Habuka¹, Jaeha Choi¹ (1.Yokohama Nat. Univ.)

Oral presentation

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 15, 2016 1:45 PM - 5:30 PM B2 (Exhibition Hall)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[15p-B2-1] Self-compensation mechanism of X-ray induced charge-up on SiO₂surface

〇Takahiro Harie^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

2:00 PM - 2:15 PM

[15p-B2-2] Comparative Study of Ambient-pressure XPS Spectra of Water-adsorbed GeO₂/Ge and SiO₂/Si Structures

〇Kenta Arima¹, Daichi Mori¹, Hiroshi Oka¹, Takuji Hosoi¹, Kentaro Kawai¹, Zhi Liu², Heiji Watanabe¹, Mizuho Morita¹ (1.Osaka Univ., 2.LBNL)

2:15 PM - 2:30 PM

[15p-B2-3] Vibrational Frequency Variation of H₂ Molecule in SiO₂/Si Interface Structures

〇Koichi Kato¹, Katsuyuki Fukutani¹ (1.Univ. Tokyo, Industrial Inst.)

2:30 PM - 2:45 PM

△ [15p-B2-4] Investigation of the origin of additional broad peaks in Raman spectra from thin SiGe films

〇Kazuma Takeuchi¹, Daisuke Kosemura¹, Ryo Yokogawa¹, Naomi Sawamoto¹, Koji Usuda², Atsushi Ogura¹ (1.Meiji Univ., 2.Toshiba Corp.)

2:45 PM - 3:00 PM

[15p-B2-5] Study on Electroluminescence from Si Quantum Dots with Ge Core

〇Kentaro Yamada¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

3:00 PM - 3:15 PM

[15p-B2-6] Analysis of resistive switching mechanism at Pt/Nb:SrTiO₃ junction

〇Yuuto Hagihara¹, Toshiki Shiomi¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

3:15 PM - 3:30 PM

△ [15p-B2-7] Impacts of Ar beam irradiation time and recovery by annealing in Si-based Schottky contact

〇Shohei Hisamoto¹, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ.)

3:30 PM - 3:45 PM

[15p-B2-8] Evaluation of Rear Surfaces of PERC Solar Cells with IQE Mapping

〇Toshimitsu Mochizuki¹, Joonwichien Supawan¹, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST)

4:00 PM - 4:15 PM

[15p-B2-9] Study on recovery rate of SiC polymorphs by first-principles calculation

〇(M1)Kiko Yamaguchi^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

4:15 PM - 4:30 PM

[15p-B2-10] Molecular dynamics simulation of Si by TE-TB method

〇Shinya Nishino¹, Takeo Fujiwara², Susumu Yamamoto³, Minoru Ikeda⁴, Takashi Suzuki¹, Yasuaki Ohtani¹ (1.ARGO GRAPHICS Inc., 2.The University of Tokyo, 3.Tokyo University of Technology, 4.NIMS)

4:30 PM - 4:45 PM

[15p-B2-11] Prediction Ability of Neural Network for Dipole Moments at High-k/SiO₂Interfaces

〇(M1)Koki Nakane¹, Ryota Kunugi¹, Motohiro Tomita^1,2, Takanobu Watanabe¹ (1.Waseda Univ., 2.JSPS Research PD)

4:45 PM - 5:00 PM

[15p-B2-12] Band to Band Tunneling Model Considering Non-Uniform Electric field for Simulation of Tunnel FET

〇Hidehiro Asai¹, Kocihi Fukuda¹, Junichi Hattori¹, Nobuyuki Sano² (1.AIST, 2.Tsukuba Univ.)

5:00 PM - 5:15 PM

[15p-B2-13] Corrugation Effects on Ballistic Thermal Transport by Acoustic Phonons in Silicon Nanowires

〇Junichi Hattori¹, Vladimir Poborchii¹, Tetsuya Tada¹ (1.AIST)

5:15 PM - 5:30 PM

[15p-B2-14] Monte Carlo Simulation of Thermoelectric Properties in Si Nanostructures

〇Kento Hamada¹, Yoshinari Kamakura¹ (1.Osaka Univ.)

Poster presentation

[14p-P4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P4 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[14p-P4-1] Adhesion behavior of metal contamination in the isopropyl alcohol

〇Kazuya Dobashi¹, Misako Saito¹ (1.Tokyo Electron Ltd.)

1:30 PM - 3:30 PM

[14p-P4-2] Laser Ablation for Creating Nano-Sized Texture on Silicon Surfaces

Shin-ya Asakura¹, 〇Mitsunori Saito¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[14p-P4-3] Quasi-ballistic transport analysis of Si nanowire junctionless transistor

〇Ryoma Shimizu¹, Masato Ichii¹, Satofumi Souma¹, Matsuto Ogawa¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[14p-P4-4] Simulation of Integration for Self-bias Channel Diode With Super Junction Structure

〇(M2)Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

1:30 PM - 3:30 PM

[14p-P4-5] Crystal Orientation Dependence of Ballistic Transport Characteristics in Silicane and Germanane MOSFETs

〇Naosuke Oka¹, Sirou Kaneko¹, Satofumi Souma¹, Matsuto Ogawa¹ (1.Kobe Univ.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15a-B2-1~8] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15a-B2-1] Water Flow between Wafers in Batch-Type Silicon Wafer Wet Cleaner

[15a-B2-2] Water Nozzle Design for Batch-type Silicon Wafer Wet Cleaning Bath

[15a-B2-3] Comparison of vacuum drying and spin drying Lmprovement of pattern collapse

[15a-B2-4] Behavior analysis of Si etching process with the HF/HNO3 mixture by single spin wafer processor

△ [15a-B2-5] Formation of the sulfur-terminated Ge(111) surface using HF aq. solution with H₂SO₃

[15a-B2-6] Molecular Dynamics Analysis on the Behavior of Water Detached by IPA on SiO₂ Surface

△ [15a-B2-7] Formation of atomically flat Si(100) surface by Ar/H₂ annealing and its effect on MISFET characteristics

[15a-B2-8] Occupation Area of Organic Molecules Adsorbed in Multi-Component System

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-B2-1] Self-compensation mechanism of X-ray induced charge-up on SiO₂surface

[15p-B2-2] Comparative Study of Ambient-pressure XPS Spectra of Water-adsorbed GeO₂/Ge and SiO₂/Si Structures

[15p-B2-3] Vibrational Frequency Variation of H₂ Molecule in SiO₂/Si Interface Structures

△ [15p-B2-4] Investigation of the origin of additional broad peaks in Raman spectra from thin SiGe films

[15p-B2-5] Study on Electroluminescence from Si Quantum Dots with Ge Core

[15p-B2-6] Analysis of resistive switching mechanism at Pt/Nb:SrTiO₃ junction

△ [15p-B2-7] Impacts of Ar beam irradiation time and recovery by annealing in Si-based Schottky contact

[15p-B2-8] Evaluation of Rear Surfaces of PERC Solar Cells with IQE Mapping

[15p-B2-9] Study on recovery rate of SiC polymorphs by first-principles calculation

[15p-B2-10] Molecular dynamics simulation of Si by TE-TB method

[15p-B2-11] Prediction Ability of Neural Network for Dipole Moments at High-k/SiO₂Interfaces

[15p-B2-12] Band to Band Tunneling Model Considering Non-Uniform Electric field for Simulation of Tunnel FET

[15p-B2-13] Corrugation Effects on Ballistic Thermal Transport by Acoustic Phonons in Silicon Nanowires

[15p-B2-14] Monte Carlo Simulation of Thermoelectric Properties in Si Nanostructures

[14p-P4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[14p-P4-1] Adhesion behavior of metal contamination in the isopropyl alcohol

[14p-P4-2] Laser Ablation for Creating Nano-Sized Texture on Silicon Surfaces

[14p-P4-3] Quasi-ballistic transport analysis of Si nanowire junctionless transistor

[14p-P4-4] Simulation of Integration for Self-bias Channel Diode With Super Junction Structure

[14p-P4-5] Crystal Orientation Dependence of Ballistic Transport Characteristics in Silicane and Germanane MOSFETs

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15a-B2-1~8] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [15a-B2-5] Formation of the sulfur-terminated Ge(111) surface using HF aq. solution with H2SO3

△ [15a-B2-7] Formation of atomically flat Si(100) surface by Ar/H2 annealing and its effect on MISFET characteristics

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [15p-B2-4] Investigation of the origin of additional broad peaks in Raman spectra from thin SiGe films

△ [15p-B2-7] Impacts of Ar beam irradiation time and recovery by annealing in Si-based Schottky contact

[14p-P4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Authentication

△ [15a-B2-5] Formation of the sulfur-terminated Ge(111) surface using HF aq. solution with H₂SO₃

△ [15a-B2-7] Formation of atomically flat Si(100) surface by Ar/H₂ annealing and its effect on MISFET characteristics