The 77th JSAP Autumn Meeting, 2016

Presentation information

Print

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 15, 2016 1:45 PM - 5:30 PM B2 (Exhibition Hall)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

1:45 PM - 2:00 PM

[15p-B2-1] Self-compensation mechanism of X-ray induced charge-up on SiO2 surface

〇Takahiro Harie1,2 (1.Waseda Univ., 2.ISAS/JAXA)

Keywords:X-ray Photoelectron Spectroscopy