[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

〇Masaya Fuchi¹, Mikihiro Arima¹, Yoshikazu Terai¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (1.Kyutech, 2.QST-QuBS)

Keywords:iron disilicide, silicon heteroepitaxy, multiple ion scattering

High grade β-FeSi₂ films epitaxially grown on Si substrates can be realized by MBE. Using such a film we investigated quality of atomic arrangement by using axial ion channeling measurements and obtained unexpectedly large atomic displacements in the film but which can be explained by a single ion scattering mechanism. In this study, such a film was investigated by a multiple scattering mechanism, where incident ions were scattered by a small angle inside the β-film and entered into Si substrates. In this condition, we can evaluate quality of the β- film from the channeling of Si atoms in the Si substrate.