[15p-B4-1~8] CS.5 3.11&13.7 Code-sharing session

[15p-B4-3] Magneto-PL measurements of single GaAs/AlGaAs droplet quantum dots

〇Reina Kaji¹, Takahiro Tominaga¹, Takaaki Mano², Satoshi Odashima³, Takashi Kuroda², Hirotaka Sasakura¹, Satoru Adachi¹ (1.Hokkaido Univ., 2.NIMS, 3.Hachinohe Inst. Tech.)

Keywords:quantum dot, g-factor

The control of spin states in semiconductor nanostructures has gained considerable attention from both scientific and engineering viewpoints. One of the key quantities for the control protocols of spins is the g-factor of the confined carriers, which is the coefficient connecting a carrier’s magnetic dipole moment with the spin degrees of freedom. The effective g-factor in semiconductor nanostructures generally differs from the value determined mainly by the material composition because of the wide variety of the modulation. Thus the developing techniques for the control and/or evaluation of the carrier g-factors are important. In our previous works, we found that the hole g-factor was affected by the strain induced valence band mixing in the self-assembled InAs quantum rings grown with conventional S-K technique. In this work, we used the self-assembled GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy which is expected to be “strain-free”, and we investigated the magneto-optical properties of single GaAs droplet QDs.