[15p-B4-1~8] CS.5 3.11フォトニック構造・現象，13.7ナノ構造・量⼦現象のコードシェアセッション

▲ [15p-B4-6] Entangled photon emitting diode based on GaAs droplet quantum dots

〇(P)Neul Ha¹、Takaaki Mano¹、Yoshiki Sakuma¹、Kazuaki Sakoda¹、Takashi Kuroda¹ (1.NIMS)

キーワード：Entanglement, Quantum dots, Droplet epitaxy

Semiconductor quantum dot (QD) is one of the promising candidates for on-demand entangled photon emitters. By using GaAs (111)A surface with three-fold rotational symmetry, we have realized highly symmetric GaAs QDs/AlGaAs by droplet epitaxy, which generate high quality entangled photon with filtering-free violation of Bell's inequality. Previously, we have used optical excitation for the entangled photon generation. In this study, we report the formation of light-emitting diodes (LED) that generate entangled photons by current injection, which is an important step for practical device applications. The I-V curve of the sample revealed a diode-type asymmetric response. We applied a forward bias, so that the electroluminescence intensity reaches the saturation value. We confirmed clear correlation between XX and X photons in any polarization basis, which is a rigorous proof for the formation of quantum entanglement.