The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15p-B9-1~17] 13.3 Insulator technology

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

Tsutomu Tezuka(TOSHIBA), Toyohiro Chikyo(NIMS)

4:30 PM - 4:45 PM

[15p-B9-13] The effect of Post Metallization Annealing for GeO2/Ge structure using CVD method

〇Takumi Hadano1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri & Tech)

Keywords:CVD, GeO2