[15p-B9-1~17] 13.3 絶縁膜技術

▲ [15p-B9-16] Reduction of slow trap density in Al₂O₃/n-Ge MOS interfaces by insertion of GeO_xN_y

〇Mengnan Ke^1,2、Xiao Yu^1,2、Mitsuru Takenaka^1,2、Shinichi Takagi^1,2 (1.Tokyo Univ.、2.JST-CREST)

キーワード：semiconductor