The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15p-B9-1~17] 13.3 Insulator technology

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

Tsutomu Tezuka(TOSHIBA), Toyohiro Chikyo(NIMS)

2:15 PM - 2:30 PM

[15p-B9-5] Deposition conditions study of (Ba, Sr)TiO3 by Liquid Phase Deposition method

〇(M2)Shunsaku Kunimitsu1, Nobuo Haneji1 (1.YNU)

Keywords:LPD, dielectric thin film, barium strontium titanate

The deposition of dielectric materials using liquid phase deposition (LPD) method have been investigated, for high-speed memory using a high dielectric material such as a DRAM or FeRAM. We did LPD methods of (Ba, Sr) TiO3 which is a material that dielectric characteristics are changed by the content ratio of Ba and Sr, in reference the deposition conditions of the basic constructs SrTiO3. As a result, thin films which have very small residual polarization is obtained, and change the hysteresis loop of a thin film by the difference in the solution concentration has occurred.