The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15p-B9-1~17] 13.3 Insulator technology

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

Tsutomu Tezuka(TOSHIBA), Toyohiro Chikyo(NIMS)

3:00 PM - 3:15 PM

▲ [15p-B9-8] Carrier Trapping Properties in La2O3/InGaAs MOSFETs

〇(D)ChihYu Chang1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:InGaAs MOSFET, La2O3, Carrier trapping effect

In this research, it is found that the InGaAs MOSFET with La2O3/InGaAs as MOS interfaces has smaller carrier trapping effect in the channel by the results of ID-VG hysteresis, inversion carrier trapping and drift characteristic of Is.