[15p-B9-1~17] 13.3 Insulator technology

△ [15p-B9-7] In content dependence of Pre-treatment Effects for Al₂O₃/In_xGa_1-xAs MOS Interface Properties

〇(B)Chiaki Yokoyama¹, Chih-Yu Chang^1,2,3, Mitsuru Takenaka^1,2,3, Shinichi Takagi^1,2,3 (1.The Univ. of Tokyo, Faculty of Engineering, 2.The Univ. of Tokyo, School of Engineering, 3.JST-CREST)

Keywords:InGaAs, Pre-Treatment, MOS interface

Sulfur passivation is commonly used for In_0.53Ga_0.47As surface preparation prior to MOS structure formation, while it has been reported that BHF cleaning is better for InAs surface preparation than Sulfur cleaning. However, the In content dependence of the optimal pre-treatment effect has not been clarified yet. In this study, we fabricated Al₂O₃/In_xGa_1-xAs(x=0.53, 0.7, 1) MOS capacitors using Sulfur cleaning or BHF cleaning, and examined their MOS interface properties through C-V characteristics, the Terman method and the conductance method. As a result, it has been revealed that, as the In content become higher, BHF cleaning provides lower D_it than Sulfur cleaning.