[15p-B9-1~17] 13.3 絶縁膜技術

▲ [15p-B9-9] Energy Distribution of Slow Trap Density at La₂O₃/InGaAs MOS Interfaces

〇(D)ChihYu Chang^1,2、Mitsuru Takenaka^1,2、Shinichi Takagi^1,2 (1.The Univ. of Tokyo、2.JST-CREST)

キーワード：InGaAs, La2O3, Slow trap density

In this research, the energy distribution of slow trap density at La₂O₃/InGaAs and Al₂O₃/InGaAs MOS interfaces was analyzed by the hysteresis in C-V characteristic. It is found that the slow trap densities distributed around conduction band edge are similar for the two gate dielectrics, while the slow trap density of La₂O₃/InGaAs distributed from midgap to the valence band is 2~3 times higher than that of Al₂O₃/InGaAs. It is clarified that the large hysteresis in the C-V of La₂O₃/InGaAs is attributed to the high slow trap density distributed from midgap to the valence band.